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MJD41C - Complementary Power Transistors

MJD41C_4561452.PDF Datasheet

 
Part No. MJD41C MJD42C
Description Complementary Power Transistors

File Size 43.02K  /  2 Page  

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Part: MJD41C
Maker: 0N/MOT
Pack: TO-252
Stock: Reserved
Unit price for :
    50: $0.14
  100: $0.13
1000: $0.12

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 Full text search : Complementary Power Transistors


 Related Part Number
PART Description Maker
CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
Continental Device India Limited
CSB772P CSB772R CSB772 CSB772E CSB772Q 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
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CDIL[Continental Device India Limited]
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From old datasheet system
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
D45H D44H D45H8 D44H10 D45H11 D44H8 D45H10 D44H11 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
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RECTRON LTD
Rectron Semiconductor
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Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
MJ14001 MJ14003 MJ14002 ON1978 60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS 60 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AE
60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS 60 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AE
From old datasheet system
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
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NTHD3100C NTHD3100CT1 NTHD3100CT1G NTHD3100CT3 NTH Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™
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Power MOSFET 20V, 3.9A/4.4A, Complementary ChipFET(20V, 3.9A/4.4A功率MOSFET)
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MJD12205 MJD122G MJD122T4 MJD122T4G MJD127G MJD127 Complementary Darlington Power Transistor
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10 A, 60 V, NPN, Si, POWER TRANSISTOR
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